Infineon Technologies Introduces Innovative TrenchStop and FieldStop Technology in New Generation of Fast IGBTs

Enables Energy Efficiency

MUNICH, NUREMBERG, Germany--(BUSINESS WIRE)--May 14, 2002--Infineon Technologies, a leading manufacturer of power semiconductors, announced a new generation of its IGBT (Insulated Gate Bipolar Transistor) product family at the PCIM Europe 2002 show. The new IGBT products are for the 1200V voltage range and combine TrenchStop and FieldStop technology. In contrast to standard Non-Punch-Through (NPT) IGBTs, these new IGBTs reduce conduction losses by up to 40 percent while exhibiting the same low switching losses. Optimized for switching frequencies up to 10kHz in "hard-switching" or up to 30kHz in "resonant switching" topologies, the products are ideally suited for use in industrial motor drives of all kinds, as well as in frequency converters, robot controllers and uninterruptible power supplies.

Technical details of the 1200V IGBT family

IGBT power switches cause both conduction losses and switching losses. With standard NPT IGBTs, only the conduction losses or only the switching losses can be minimized, in each case at the expense of the other parameter. Infineon's unique 1200V IGBTs in TrenchStop technology enables reduced conduction losses up to 40 percent (at V(CEsat) typ.1.7 V; V(GE) = 15 V; I© = 15 A; T(j)=25 degrees C), while switching losses remain as low as before. The FieldStop structure within the power semiconductor ensures a significant reduction in the tail current that occurs during high-speed switching, and at the same time, the TrenchStop cell limits conduction losses to a minimum due to the extremely low saturation voltage. As a result, considerably less heat is generated, and consequently, the cooling requirement is reduced, ultimately leading to a lower system cost.

The advantages of Infineon's new TrenchStop technology family include the customary exceptional ruggedness and short-circuit withstand capability, increased reliability, and low electromagnetic interference (EMI). The 1200V IGBTs therefore enable the development of innovative concepts for a more compact system design for electrical drives. As with NPT IGBTs, the conductivity state voltage exhibits a positive temperature coefficient, permitting the parallel connection of multiple TrenchStop IGBTs.

Infineon's new family of 1200V TrenchStop IGBTs in the advanced TO247 package currently comprises five single versions for output currents from 8A to 55A (T(c) = +100 degrees C) or 16A to 100A (T(c) = +25 degrees C), plus four versions in the DuoPack package for output currents from 8A to 40A (T(c) = +100 degrees C) or 16A to 80A (T(c) = +25 degrees C). The DuoPack, which includes the anti-parallel EmCon (Emitter Controlled) diode with a TrenchStop IGBT device, enables exceptionally low-cost solutions in applications requiring a reverse diode. Infineon expects to introduce a further 600V version of the TrenchStop IGBTs before the end of 2003.

Availability and Pricing

All versions of the 1200V TrenchStop IGBTs are available in volume quantities. In quantities of one thousand units, the price per unit is less than 2.50 US dollars for 15A single versions in the TO247 package, and less than 3.00 US dollars for 15A DuoPack versions in the TO247 package.

As the technology leader, Infineon thus offers a comprehensive product portfolio of power semiconductors for power supply systems, ranging from standard IGBTs, through 600V and 1200V fast and high-speed IGBTs in NPT technology, to the new TrenchStop IGBTs. They are available in a number of package variants.

Infineon Technologies will present the new power semiconductors at PCIM 2002 show (May 14-16, 2002, Nuremberg, Germany) in Hall 12, booth 103.

Further information on Infineon's IGBT products is available at www.infineon.com/igbt

About Infineon

Infineon Technologies AG, Munich, Germany, offers semiconductor and system solutions for applications in the wired and wireless communications markets, for security systems and smartcards, for the automotive and industrial sectors, as well as memory products. With a global presence, Infineon operates in the US from San Jose, CA, in the Asia-Pacific region from Singapore and in Japan from Tokyo. In the fiscal year 2001 (ending September), the company achieved sales of Euro 5.67 billion with about 33,800 employees worldwide. Infineon is listed on the DAX index of the Frankfurt Stock Exchange and on the New York Stock Exchange (ticker symbol:IFX). Further information is available at www.infineon.com

This news release and a press photo are available online at www.infineon.com/news

Note to Editors: Infineon Technologies North America Corp. All rights reserved. Infineon and the stylized Infineon Technologies design are registered trademarks and service marks of Infineon Technologies AG. Other product and brand names may be trademarks or registered trademarks of their respective owners.

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